收藏本站
DS1345W
POWER-DOWN/POWER-UP TIMING
(T A : See Note 10)
PARAMETER
V C C Fail Detect to CE and
WE Inactive
SYMBOL
t PD
MIN
TYP
MAX
1.5
UNITS
μs
NOTES
11
V CC slew from V TP to 0V
t F
150
μs
V CC Fail Detect to RST
Active
V CC slew from 0V to V TP
V CC Valid to CE and WE
Inactive
V CC Valid to End of Write
Protection
t RPD
t R
t PU
t REC
150
15
2
125
μs
μs
ms
ms
14
V CC Valid to RST Inactive
V CC Valid to BW Valid
t RPU
t BPU
150
200
350
1
ms
s
14
14
BATTERY WARNING TIMING
(T A : See Note 10)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Battery Test Cycle
Battery Test Pulse Width
Battery Test to BW Active
t BTC
t BTPW
t BW
24
1
1
hr
s
s
(T A = +25°C)
PARAMETER
Expected Data
Retention Time
SYMBOL
t DR
MIN
10
TYP
MAX
UNITS
years
NOTES
9
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1. W E is high for a read cycle.
2. OE = V IH or V IL . If OE = V IH during write cycle, the output buffers remain in a high impedance state.
3. t WP is specified as the logical AND of CE and WE . t WP is measured from the latter of CE or WE
going low to the earlier of CE or WE going high.
4. t DS is measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 5 pF load and are not 100% tested.
6. If the CE low transition occurs simultaneously with or latter than the WE low transition, the output
buffers remain in a high impedance state during this period.
7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in high impedance state during this period.
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high impedance state during this period.
9. Each DS1345W has a built-in switch that disconnects the lithium source until V CC is first applied by
the user. The expected t DR is defined as accumulative time in the absence of V CC starting from the
time power is first applied by the user.
8 of 10
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DS1345YP-70IND+ IC NVSRAM 1MBIT 70NS 34PCM
DS1350WP-100IND+ IC NVSRAM 4MBIT 100NS 34PCM
DS1350YP-70IND+ IC NVSRAM 4MBIT 70NS 34PCM
DS1609-50+ IC SRAM 2KBIT 50NS 24DIP
DS2016R-100+ IC SRAM 16KBIT 100NS 24SOIC
DS2030L-100# IC NVSRAM 256KBIT 100NS 256BGA
DS2030W-100# IC NVSRAM 256KBIT 100NS 256BGA
DS2030Y-70# IC NVSRAM 256KBIT 70NS 256BGA
相关代理商/技术参数
DS1345WP-150 功能描述:NVRAM 3.3V 1024K NV SRAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube
DS1345WP-150+ 功能描述:NVRAM 3.3V 1024K NV SRAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube
DS1345WP-150-IND 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 1024k Nonvolatile SRAM with Battery Monitor
DS1345Y 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:1024k Nonvolatile SRAM with Battery Monitor
DS1345Y/AB 制造商:未知厂家 制造商全称:未知厂家 功能描述:1024k Nonvolatile SRAM with Battery Monitor
DS1345Y-70 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:1024k Nonvolatile SRAM with Battery Monitor
DS1345YA-100 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:1024k Nonvolatile SRAM with Battery Monitor
DS1345YA-100-IND 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:1024k Nonvolatile SRAM with Battery Monitor